| 1 |
Single Miller Compensation Based Four Stage CMOS Amplifier
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IETE Journal of Research
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| 2 |
Modeling MOSFET Threshold Voltage in TSMC 0.18um CMOS for Integrated Circuits Design
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Contributions of Science and Technology for Engineering
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| 3 |
Four stage CMOS operational amplifier, frequency compensated via active miller network
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Engineering Report
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| 4 |
Ultrafast all‑optical half‑adder and half‑subtractor based on linear 2D photonic crystal
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Optical and Quantum Electronics
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| 5 |
All‑optical OR, NOT and XOR gates based on linear photonic crystal with high port‑to‑port isolation
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Applied Physics B
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| 6 |
Performance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study
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International Journal of Nano Dimension
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| 7 |
Quantum simulation of a junctionless carbon nanotube field-effect transistor under torsional strain
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Superlattices and Microstructures
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| 8 |
Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain
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ECS Journal of Solid State Science and Technology
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| 9 |
تحلیل زمان قفل حلقه قفل فاز پمپ بار با در نظر گرفتن اثر غیر ایده آل
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مهندسی برق و مهندسی کامپیوتر ایران
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| 10 |
Computational study of bandgap-engineered Graphene nano ribbon tunneling field effect transistor (BE-GNR-TFET)
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International Journal of Nano Dimension
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| 11 |
Adaptive self-threshold strategy of high speed comparator-based relaxation oscillator using 0.18-um low-power CMOS design
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Analog Integrated Circuits and Signal Processing
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| 12 |
محاسبه زمان نشست و SR تقویت کننده های عملیاتی دوطبقه CMOS با جبران سازی کسکود
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مهندسی برق و مهندسی کامپیوتر ایران
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| 13 |
A new step response modeling in CMOS operational amplifiers
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Analog Integrated Circuits and Signal Processing
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| 14 |
تحلیل غیر خطی جیتر انتقالی در حلقه قفل فاز پمپ بار با استفاده از بسط سری ولترا
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مهندسی برق و مهندسی کامپیوتر ایران
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| 15 |
A computational study of a carbon nanotube junctionless tunneling field-effect transistor (CNT-JLTFET) based on the charge plasma concept
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Superlattices and Microstructures
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| 16 |
A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport
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International Nano Letters
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| 17 |
Nonlinear analysis of VCO jitter generation using Volterra series
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COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
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| 18 |
Calculation of Third-Order Harmonic Distortion in an Operational Transconductance Amplifier
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Majlesi Journal of Telecommunication Devices
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| 19 |
The Linear Behavior Analysis of Class D Power Amplifier
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Majlesi Journal of Telecommunication Devices
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| 20 |
Comprehensive Study of the Third-order Charge Pump PLL Dynamic Behavior
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Majlesi Journal of Telecommunication Devices
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| 21 |
A New Dual-Frequency LC oscillator: Analysis and Design
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Majlesi Journal of Telecommunication Devices
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| 22 |
A Computational Study of a Heterostructure Tunneling Carbon Nanotube Field-Effect Transistor
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Journal of ELECTRONIC MATERIALS
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| 23 |
Bang-Bang clock and data recovery circuits – A survey
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Majlesi Journal of Telecommunication Devices
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| 24 |
A novel approach to analysis and design of bang-bang CDR circuits
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COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
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| 25 |
Modeling of Jitter Characteristics for the Second Order Bang-Bang CDR
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َAUT journal of Modeling and Simulation
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| 26 |
Nonlinear Analysis of BBCDR Jitter Generation Using VOLTERRA Series
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IEEE Transactions on Circuits and Systems II
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| 27 |
Modeling of Jitter in Bang-Bang CDR with Fourier Series Analysis
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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I
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| 28 |
Remarks on Transient Amplitude Analysis of MOS Cross-Coupled Oscillators
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The Institute of Electronics, Information and Communication Engineers Transactions on Electronics
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