مشخصات پژوهش

عنوان	A computational study of a carbon nanotube junctionless tunneling field-effect transistor (CNT-JLTFET) based on the charge plasma concept
نوع پژوهش	مقاله چاپ شده
کلیدواژه‌ها	Junctionless transistor, Tunnel FET (TFET), Ambipolar, Subthreshold swing (SS), Carbon nanotube (CNT)
چکیده	In this work, a carbon nanotube junctionless tunnel field-effect transistor has been proposed and investigated. The presented structure uses two isolated gates with the same work function (main gate (MG) and P-gate (PG)) which are separated by a 3 nm SiO2 spacer. PG has a constant voltage and a constant length of 0.4 V and 12 nm, respectively which has been used for electrically activation of the source region to behave like a tunnel FET. Simulations show that in comparison with the conventional carbon nanotube tunnel field-effect transistor (CNT-TFET) and carbon nanotube tunnel field-effect transistor with hetero-gate dielectric (HGD-CNT-TFET) suggested structure has significant higher ON current and improvement in ambipolar behavior. Furthermore, analog characteristics like unity gain frequency ( ft) and transconductance (gm) have been improved considerably.
پژوهشگران	رضا یوسفی (نفر سوم)، سید صالح قریشی (نفر دوم)، حبیب اله آدرنگ (نفر چهارم)، سیده هدی طاهائی (نفر اول)