|
چکیده
|
In this paper, a new ultra-wideband low-noise amplifier (LNA) is proposed. The proposed LNA has flat gain and low noise figure (NF) in the frequency range of 3.1 to 10.6 GHz. To obtain higher gain, cascode architecture is used. In this design, to have a lower NF, the noise cancellation technique applies to the cascode architecture. In addition, to have better matching at the input and output, active feedback and matching transistors are used, which also leads to better NF. To have flat gain, RLC load is used. In the proposed LNA, only one inductor is used, which leads to the smaller chip area. The proposed circuit is designed in 90 nm CMOS technology. The simulation shows NF of between 1.62 and 2.1 dB, flat gain between 11.9 and 12 dB and power consumption of 11.72 mW in the frequency range of 3.1 to 10.6 GHz. The simulation results support the theoretical predictions.
|