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چکیده
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In recent years, there has been a proliferation of methodologies for the production of nano-gapped electrodes. This has resulted in significant advancements in the domain of single-molecule electronics, encompassing both practical and theoretical aspects. The integration of electronic items into our daily lives has become increasingly indispensable. There exists a significant market need for the production of compact and portable electronic devices that possess high levels of functionality and performance. Carbon nanotubes (CNTs) and boron nitride (BN) nanotubes possess exceptional electrical, mechanical, and thermal characteristics that can be effectively utilised in the development of advanced electronic devices for the future.In this study, we undertake a theoretical examination of the conductance properties and current-voltage (I-V) characteristics of (n,0) zigzag single-walled boron nitride (BN) nanotubes within the BN/CNT/BN structure system. We consider nanocontacts as (n,0) zigzag single-walled carbon nanotubes and employ a tight-binding model, along with established approaches and methods rooted in Green's function theory and Landauer formalism. The analysis is conducted using a MATLAB programme. The results of our computations indicate that the conductance is sensitive to changes in the index. The I-V characteristics of this system make it a potential candidate for a nanoelectronic switching device. The electrical characteristics of (n, 0) semiconducting nanotubes can undergo significant alterations when exposed to contaminants. The density of states (DOS) is computed for several scenarios at coordinates (n, 0) in order to investigate the electronic characteristics of the system. Our findings indicate that the nanotubes inside the system exhibit semiconductor behavior. For carbon nanotubes (8, 14, 16) with various amounts of B and N impurities present, electronic band structures and density of states of (n,0) were determined. These contaminants were discovered to significantly affect the conductivity of carbon nanotubes where the electrical characteristics of tiny gap semiconducting (n, 0) tubes can significantly alter.
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