مشخصات پژوهش

عنوان	Synthesis and Investigation of Al/Sn/La2O3 Nanocomposite for Gate Dielectric Applications
نوع پژوهش	مقاله چاپ شده
کلیدواژه‌ها	Gate Dielectric, Nanocomposite , Al/Sn/La2O3
چکیده	In this research, TGA technique was used for determining thermal and gravimetrical stability of Al/Sn/La2O3 nanostructures prepared by sol-gel and spin-coating methods. Structural properties and surface morphology of the films were investigated by different analysis methods. Energy dispersive X-ray spectroscopy and a map were used to make a quantitative chemical analysis of unknown materials. Electrical properties of the samples were measured by metal-dielectric-semiconductor through capacitance–voltage and current rate–voltage. The conduction mechanism in the electrical field below 0.12 MV/cm and in the temperature range of 335 K < T < 420 K was found to be ohmic emission. A model of thermal excitation is proposed to explain the mechanism of ohmic conduction current. The highest value of dielectric constant (k) was ~32 at T1 = 200°C with almost amorphous structure. The results showed that at T1 = 200°C the Al/Sn/La2O3 nanostructure has lower leakage current rate and higher capacitance than those for other samples because of almost amorphous structure.
پژوهشگران	علی بهاری (نفر چهارم)، مریم پادام (نفر سوم)، مسعود ابراهیم زاده (نفر دوم)، مهرنوش نخعی (نفر اول)