مشخصات پژوهش

عنوان	Vertically-tapered silicon nanowire arrays prepared by plasma enhanced chemical vapor deposition: Synthesis, structural characterization and photoluminescence
نوع پژوهش	مقاله چاپ شده
کلیدواژه‌ها	Crystal structure Taperingparameter Temperature Vapor–liquid–solid
چکیده	Vertically aligned silicon nanowires (SiNWs) have been successfully synthesized using pure silane gas as a precursor by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of the growth temperature on the morphology, structure and photoluminescence properties of SiNWs has been studied. The SiNWs were needle-liked materials with the length of a few microns having the diameters of tens of nanometers near the bottom and a few nanometers at the top. Thinner nanowires have been obtained at the higher growth temperature process. High resolution transmission electron microscopy confirms that the nanowires are composed of a crystalline silicon core with an oxide shell. The PL spectrum of the Si nanoneedles have shown two emission bands around 450 nm and ~750, which originate from the defects related to oxygen fault in the oxide shell and interfaces between the crystalline Si core and the oxide shell, respectively.
پژوهشگران	ذوالقرنین عبدالمالک (نفر سوم)، علی اکبر آشکاران (نفر دوم)، حبیب حمیدی نژاد (نفر اول)