سید نورالدین میرنیا

Scaling of silicon dioxide dielectrics has once been viewed as an effective approach to enhance transistor performance in Complementary Metal-Oxide-Semiconductor (CMOS) technologies. Some issues such as tunneling, leakage currents and light atom penetration through the film are threatening the ultra thin SiO 2 be as a good dielectric for industrial and electron device. We have thus synthesized Ps/La 2O 3 hybrid nano composite with 0/07, 0/14 and 0.28 gr Ps at 80, 300 and 500°C calcinated temperatures for SiO 2 replacing. The Ps/La 2O 3 hybrid nano composites were prepared by a sol-gel method. Nanostructural properties were characterized by using, Energy Dispersive Spectrometers (EDS), X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and GPS 132A techniques. We measured the dielectric constant (k), capacity (C), quality factor (QF) and resistor (R) of Ps/La 2O 3 hybrid nano composite with using GPS 132A technique at a frequency of 120 KHz. The higher dielectric constant (82.67) is found at 300°C with 0.28 gr Ps. Also the square wave voltammetrics peaks current of Ps/La 2O 3 hybrid shows less linearly behavior than that other hybrid nano composites such as anthracene (An)/La 2O 3 hybrid with 0.05 micro molarities of Ps concentration. The obtained results indicate that 0.28 gr Ps/La 2O 3 hybrid nano composite synthesized at 300°C can be used as a good gate dielectric of the next OTFT devices.