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Ali Akbar Ashkarran

Ali Akbar Ashkarran

Academic rank: Assistant Professor
ORCID:
Education: PhD.
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Faculty:
Address:
Phone: 01135302485

Research

Title
Vertically-tapered silicon nanowire arrays prepared by plasma enhanced chemical vapor deposition: Synthesis, structural characterization and photoluminescence
Type
JournalPaper
Keywords
Crystal structure Taperingparameter Temperature Vapor–liquid–solid
Year
2014
Journal MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
DOI
Researchers Habib Hamidinezhad ، Ali Akbar Ashkarran ، Zulkurnain Abdul-Malek

Abstract

Vertically aligned silicon nanowires (SiNWs) have been successfully synthesized using pure silane gas as a precursor by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of the growth temperature on the morphology, structure and photoluminescence properties of SiNWs has been studied. The SiNWs were needle-liked materials with the length of a few microns having the diameters of tens of nanometers near the bottom and a few nanometers at the top. Thinner nanowires have been obtained at the higher growth temperature process. High resolution transmission electron microscopy confirms that the nanowires are composed of a crystalline silicon core with an oxide shell. The PL spectrum of the Si nanoneedles have shown two emission bands around 450 nm and ~750, which originate from the defects related to oxygen fault in the oxide shell and interfaces between the crystalline Si core and the oxide shell, respectively.