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Amin Ghadi

Amin Ghadi

Academic rank: Associate Professor
ORCID:
Education: PhD.
ScopusId:
HIndex: 0/00
Faculty: Science
Address: http://rms.umz.ac.ir/~aghadi/en/
Phone: 01135305181

Research

Title
Resonance shift induced by free carriers of a silicon resonator of quadrangular shape
Type
JournalPaper
Keywords
silicon resonator; two-photon absorption; free carrier; resonance shift
Year
2014
Journal JOURNAL OF MODERN OPTICS
DOI
Researchers Amin Ghadi ، Saeed Mirzanejhad

Abstract

The nonlinear optical interaction of a silicon resonator with a quadrangular shaped smooth bend is studied with inclusion of free carriers (FCs), two-photon absorption, the Kerr effect, and loss. It is shown that for the range of input light power from zero up to 2 W, the incident light transmits between the silicon resonator and waveguide linearly. However, with an increase of light power from 2 W to higher values, the light transmission decreases very rapidly, so that it approximately vanishes at about 10 W. Furthermore, the resonance spectrum and stability condition of the silicon resonator in the nonlinear regime is studied with inclusion of FC dispersion and FC absorption for continuous wave operation. Thermal effects induced by FC absorption increase the refractive index, which causes a redshift of about 1.2 nm for 125.13 mW light power.