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Title
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Computational study of bandgap-engineered Graphene nano ribbon tunneling field effect transistor (BE-GNR-TFET)
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Type
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JournalPaper
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Keywords
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Density of States (DOS); Graphene Nanoribbon (GNR); Non-Equilibrium Green’s Function (NEGF); Tunneling Field Effect; Unity Gain Frequency (ft).
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Abstract
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By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach. Simulation results show that, compared to the conventional GNR-TFET, the BE-GNR-TFET enjoys from a better ambipolar behavior and a higher on-current. Besides, the analog characteristic of the proposed structure such as transconductance (gm) and unity-gain frequency (ft) is also improved.
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Researchers
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Habibollah Adarang (Fourth Researcher), Reza Yousefi (Third Researcher), Seyed Saleh Ghoreishi (Second Researcher), Soheil Abbaszadeh (First Researcher)
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