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Seyed Noureddin Mirnia

Academic rank: Assistant Professor
ORCID:
Education: PhD.
ScopusId:
Faculty: Science
Address:
Phone: 9117457437

Research

Title
NANOSTRUCTURAL PROPERTIES OF POLYSTYRENE/La2O3 AS A GATE DIELECTRIC OF MOSFET.
Type
JournalPaper
Keywords
Nanostructures، Ps/La2O3 hybrid nano composite، Sol-Gel method and gate dielectric
Year
2012
Journal Digest Journal of Nanomaterials and Biostructures
DOI
Researchers Mandana Roodbari ، Reza Gholipur ، Ali Bahari ، Seyed Noureddin Mirnia

Abstract

Scaling of silicon dioxide dielectrics has once been viewed as an effective approach to enhance transistor performance in Complementary Metal-Oxide-Semiconductor (CMOS) technologies. Some issues such as tunneling, leakage currents and light atom penetration through the film are threatening the ultra thin SiO2 be as a good dielectric for industrial and electron device. We have thus synthesized Ps/La2O3 hybrid nano composite with 0/07, 0/14 and 0.28 gr Ps at 80, 300 and 5000C calcinated temperatures for SiO2 replacing. The Ps/La2O3 hybrid nano composites were prepared by a sol-gel method. Nanostructural properties were characterized by using, Energy Dispersive Spectrometers (EDS), X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and GPS 132A techniques. We measured the dielectric constant (k), capacity (C), quality factor (QF) and resistor (R) of Ps/La2O3 hybrid nano composite with using GPS 132A technique at a frequency of 120 KHz. The higher dielectric constant (82.67) is found at 3000C with 0.28 gr Ps. Also the square wave voltammetrics peaks current of Ps/La2O3 hybrid shows less linearly behavior than that other hybrid nano composites such as anthracene (An)/La2O3 hybrid with 0.05 micro molarities of Ps concentration. The obtained results indicate that 0.28 gr Ps/La2O3 hybrid nano composite synthesized at 3000C can be used as a good gate dielectric of the next OTFT devices.