The adsorption of hydrogen sulfide (H2S) molecules on non-carbonic (B, Al, and Ga nitride) graphene was studied using a first-principles van der Waals density functional (vdW-DF) method. For the adsorption of a single molecule, we determined the most stable configurations, equilibrium geometries, adsorption energies, and electronic properties by approaching the molecule on the surface of non-carbonic graphenes at different possible sites. The Ga nitride (GaN) graphene was more capable of H2S molecule adsorption than the other graphenes due to the higher binding energy value and shorter bonding distance between the H2S molecule and the graphene surface. Electron transfer calculations confirmed that the electronic properties of GaN graphene changes significantly compared to other graphenes after H2S molecule adsorption. The density of states results indicated a stronger physical hybridization between H2S and GaN graphene. Furthermore, co-adsorption of two H2S molecules on the GaN graphene as a single-layer/bi-l
