This study aimed to inhibit the growth of Lacanicillium fungicola and improve the quality of button mushroom during a 21-day storage time at 4°C using the treatment of surface dielectric barrier discharge plasma. Three gases of argon (Ar), surface evaporation of hydrogen peroxide (H2O2vapor) by argon and H2O2vapor by air were used as the injecting gas within processing times of 30, 60, 120, and 180 s. The results showed that 180 s treatment with H2O2vapor+Air plasma decreased L. fungicola spores about 3-log compared with untreated samples after 21 days of storage. In addition, physicochemical and physiological properties of button mushroom were investigated during the storage period. Polyphenol oxidase and peroxidase enzymes residual activity of samples treated by 180 s of H2O2vapor+Ar plasma reduced 93.95% and 94.1% immediately after treatment, respectively. Furthermore, stiffness, color, phenolic and antioxidant compounds on the 21st day of storage improved compared with untreated samples.
