Shrinking the complementary metal–oxide– semiconductor (CMOS) dimensions down to nanoscale regime has been faced to some problems such as boron diffusion through the gate dielectric, leakage, tunneling current and low carrier mobility through the metallic oxide and silicon nitride. To solve these problems, researchers have tried to work with MCMOS (microbial -complementary metal–oxide–semiconductor) and find alternative CMOS elements. One of the key points is the behavior of contact point at electrode/gate dielectric. We therefore synthesized three electrodes; raw carbon nanotubes (CNT) or R-CNT, Fe-CNT and S (sonication)—CNT electrodes and put them in a dual chamber microbial circuit and studied their electrical and nano structural characteristics with scanning electron microscopy, energy dispersive X-ray and GPS 132A techniques that show lower leakage current, higher capacity and higher quality factor (QF). The obtained results indicate that the Fe-CNT electrode can be introduced as a good candidate for the future of MCMOS systems.
