In the present work, ZrxLa1-xOy nanocrystallites was synthesized by Sol-Gel technique and used to deposit ZrxLa1-xOy thin film on Si(100) substrate by spin-coating at room temperature in air, followed by post annealing in O2 ambient at different temperatures from 300 to 900◦C. The molecular structure of the ZrxLa1-xOy nanocrystallites determined with using X-Ray Diffraction (XRD) analysis. The nanocrystallites size, morphology, surface structure and composition of deposited films were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) techniques and elemental qualitative analysis was performed with Energy Dispersive X-ray (EDX) spectra confirmed above claims. Using these techniques, the different reactions in various processing steps have been clarified. The dielectric constant of crystalline Zr0.5La0.5Oy thin film is about 34 determined from the Capacitance-Voltage (C-V) measurement.
