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Hojat Ghonoodi

Hojat Ghonoodi

Academic rank: Assistant Professor
ORCID:
Education: PhD.
ScopusId:
Faculty: Faculty of Technology and Engineering
Address:
Phone: 35305109

Research

Title
Increasing power efficiency in the design of a low power and low phase noise CMOS LC oscillator
Type
JournalPaper
Keywords
CMOS RF, equation, local oscillator, phase noise, power efficiency
Year
2020
Journal INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS
DOI
Researchers Saeed Soleimani Kebria ، Hojat Ghonoodi

Abstract

This study developed a local oscillator (LO) with low phase noise and low power consumption. The proposed oscillator core comprises a pair of cross-coupled transistors, which are fed by another pair of transistors that injects current at moments close to the peak of output voltage. The position of the current injection transistors, which are inserted in series with the cross-coupled transistors, affects the waveform of current injected into an inductive–capacitive (LC) tank. Installing a capacitor on the source node of the cross-coupled transistors increases the current injected into the LC tank and thereby augments the output voltage amplitude and power efficiency of the LO. The resonator phase shift and Q can be corrected by adjusting the source capacitance, which filters noise. These changes reduce the phase noise to −123.4 dBc/Hz at a frequency offset of 1 MHz and improve oscillator performance with a figure of merit equal to −193.5 dBc/Hz. To evaluate the LC tank, a 5 GHz LO was simulated at 1.8 V power supply and 2.5 mW power consumption. The simulation was conducted using a practical 0.18 complementary metal–oxide–semiconductor model manufactured by the Taiwan Semiconductor Manufacturing Company. The simulation results confirmed the analytical findings.