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Hojat Ghonoodi

Hojat Ghonoodi

Academic rank: Assistant Professor
ORCID:
Education: PhD.
ScopusId:
Faculty: Faculty of Technology and Engineering
Address:
Phone: 35305109

Research

Title
A Dual-Band Low Noise Low Power Local LC Oscillator
Type
JournalPaper
Keywords
Dual Band Oscillator, Phase Noise, RF CMOS, Analysis
Year
2021
Journal iranian journal of electrical and electronic engineering
DOI
Researchers Hojat Ghonoodi ، Mahsa Hadjmohammadi

Abstract

In this paper a novel design is presented for a dual-band LC oscillator, using an analytical approach. The core of the proposed circuit contains a cross-coupled CMOS LC oscillator with two serried LC tanks so that the inductors of these tanks have mutual inductance. There are some switches in the circuit that directly changes mutual inductance to produce two different frequencies. This technique increases the oscillation amplitude in the same power consumption that leads to the decrement of phase noise. In other words, using two serried LC tank compensates the injected phase noise from switches. The symmetrical structure is another advantage of the presented design that makes it possible to be used in multiphase oscillator. To assess the quality of the proposed circuit, a dual-band quadrature LC oscillator has been designed to oscillate at 3.6 GHz and 6.4 GHz with 1.5 V supply and 1 mA current consumption, with TSMC 0.18 CMOS practical model. Lastly, simulation results confirm the correctness of analytical results and high proficiency of the proposed design.